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PD - 97523
IRF9333PBF
HEXFET(R) Power MOSFET VDS RDS(on) max
(@VGS = -10V)
-30 19.4 32.5 14 -9.2
V m: m: nC A
6 6 6 * ' ' ' '
RDS(on) max
(@VGS = -4.5V)
Qg (typical) ID
(@TA = 25C)
SO-8
Applications
* Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features Resulting Benefits
Industry-Standard SO8 Package
Multi-Vendor Compatibility Environmentally Friendlier
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number IRF9333PBF IRF9333TRPbF
Package Type SO8 SO8
Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel
Note
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
-30 20 -9.2 -7.3 -75 2.5 1.6 0.02 -55 to + 150
Units
V
f Power Dissipation f
Power Dissipation
c
A
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
Notes through are on page 2
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1
6/21/10
IRF9333PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance
Min. Typ. Max. Units
-30 --- --- --- -1.3 --- --- --- --- --- 13 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.019 15.6 25.6 -1.8 -5.7 --- --- --- --- --- 14 25 3.5 6.4 15 16 44 55 49 1110 230 160 --- --- 19.4 32.5 -2.4 --- -1.0 -150 -100 100 --- --- 38 --- --- --- --- --- --- --- --- --- --- Typ. --- --- pF ns nC V
Conditions
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA VGS = -10V, ID = -9.2A m VGS = -4.5V, ID = -7.5A
e e
V mV/C A nA S nC
VDS = VGS, ID = -25A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VDS = -10V, ID = -7.5A VDS = -15V, VGS = -4.5V, ID = - 7.5A VGS = -10V VDS = -15V ID = -7.5A VDD = -15V, VGS = -4.5V ID = -1.0A RG = 6.8 See Figs. 20a &20b VGS = 0V VDS = -25V = 1.0MHz Max. 100 -7.5 Units mJ A
h Total Gate Charge h
Total Gate Charge
h Gate-to-Drain Charge h Gate Resistance h
Gate-to-Source Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter
e
Avalanche Characteristics
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Diode Characteristics
Parameter
IS ISM VSD trr Qrr
d
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 24 15 -2.5 A -75 -1.2 36 23 Typ. --- --- V ns nC showing the
Conditions
MOSFET symbol integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V di/dt = 100A/s Max. 20 50
G S D
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
e
TJ = 25C, IF = -2.5A, VDD = -24V
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient
e
f
g
Units
C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 3.5mH, RG = 25, IAS = -7.5A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing.
2
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IRF9333PBF
100
TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V
100
TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V
-ID, Drain-to-Source Current (A)
10
BOTTOM
-ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
-2.5V
0.1
-2.5V 60s PULSE WIDTH Tj = 25C
60s PULSE WIDTH Tj = 150C 0.1 100 0.1 1 10 100
0.01 0.1 1 10 -VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
1.6
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -9.2A 1.4
-ID, Drain-to-Source Current (A)
VGS = -10V
10
TJ = 150C
1
1.2
TJ = 25C
1.0
0.1
VDS = -15V
0.01 1.0 2.0 3.0
0.8
60s PULSE WIDTH
4.0 5.0
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C)
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 4. Normalized On-Resistance vs. Temperature
14
-VGS, Gate-to-Source Voltage (V)
12 10 8 6 4 2 0
ID= -7.5A
VDS= -24V VDS= -15V VDS= -6.0V
C, Capacitance(pF)
1000
Ciss Coss Crss
100 1 10 -VDS, Drain-to-Source Voltage (V) 100
0
8
16
24
32
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRF9333PBF
100 TJ = 150C 1000
-ID, Drain-to-Source Current (A) -ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
100 1msec 10 10msec
10
1
TJ = 25C
1
VGS = 0V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -VSD, Source-to-Drain Voltage (V) 0.1
TA = 25C Tj = 150C Single Pulse 0.1 1
DC 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
10
-VGS(th), Gate threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
8
-ID, Drain Current (A)
2.0
6
ID = -25A
4
1.5
2
0 25 50 75 100 125 150 TA , Ambient Temperature (C)
1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
100
Thermal Response ( ZthJA ) C/W
Fig 10. Threshold Voltage vs. Temperature
10
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.01 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9333PBF
) RDS(on), Drain-to -Source On Resistance (m
ID = -9.4A 50
( RDS(on), Drain-to -Source On Resistance m)
60
80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 -ID, Drain Current (A) VGS = -10V VGS = -4.5V
40
30 TJ = 125C TJ = 25C 10 2 4 6 8 10 12 14 16 18 20
20
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
420
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical On-Resistance vs. Drain Current
1000
360 300 240 180 120 60 0 25 50 75
Single Pulse Power (W)
ID TOP -2.1A -3.0A BOTTOM -7.5A
800
600
400
200
0
100
125
150
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Starting TJ , Junction Temperature (C)
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16. Typical Power vs. Time
D.U.T *
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
*
Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
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Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs
5
IRF9333PBF
Id Vds Vgs
L
0
DUT
20K 1K
S S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
VDS
L
I AS
RG
-V GS -20V
D.U.T
IAS
DRIVER
0.01
VDD A
tp
tp V(BR)DSS
15V
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
VDS VGS RG
RD
td(on) tr t d(off) tf
D.U.T.
VGS 10%
+
-VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 20a. Switching Time Test Circuit
6
-
V DD
90% VDS
Fig 20b. Switching Time Waveforms
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IRF9333PBF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
9 6 ' & ! % " $
7
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SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF9333PBF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information
Qualification level
Consumer (per JEDEC JESD47F guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D)
Moisture Sensitivity Level RoHS Compliant

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.6/2010
8
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